| PART |
Description |
Maker |
| MT88E43B |
Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E45B |
Dual inputs (tip/ring and 4 wire) Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E41 |
Extended Voltage Calling Number Identification Circuit (ECNIC)(扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口 扩展电压主叫号码识别电路ECNIC）（扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口））
|
Mitel Networks Corporation
Mitel Networks, Corp.
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IXTK20N150 IXTX20N150 |
High Voltage Power MOSFET Extended FBSOA
|
IXYS Corporation
|
| MT88E45B MT88E45BN MT88E45BS |
4-WIRE CALLING NUMBER IDENTIFICATION CIRCUIT 2
|
ZARLINK[Zarlink Semiconductor Inc]
|
| MC145480EVK |
Calling line I.D. receiver evaluation kit
|
Motorola
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| KS8630 KS8630D |
ENHANCED CALLING LINE IDENTIFIER WITH CALL WAITING
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CMX602B |
Calling Line Identifier plus Call Waiting Type II
|
CML Microcircuits
|
